unisonic technologies co., ltd 4n90 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2010 unisonic technologies co., ltd qw-r502-479.a 4 amps, 900 volts n-channel mosfet ? description the utc 4n90 is a n-channel enhancement mosfet adopting utc?s advanced technology to provide customers with dmos, planar stripe technology. this technology is designed to meet the requirements of the minimum on- state resistance and perfect switching performance. it also can withstand high energy pulse in the avalanche and communication mode. the utc 4n90 is particularly applied in high efficiency switch mode power supplies. ? features * typically 17nc low gate charge * high switching speed * 4a, 900v, r ds(on) =4.2 ? @ v gs =10v * typically 5.6pf low c rss * 100% avalanche tested * improved dv/dt capability ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 4N90L-TA3-T 4n90g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source
4n90 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-479.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 900 v gate to source voltage v gss 30 v avalanche current (note 1) i ar 4 a continuous i d 4 a continuous drain current pulsed (note 1) i dm 16 a single pulsed (note 2) e as 570 mj avalanche energy repetitive (note 1) e ar 14 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns power dissipation p d 140 w operating junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note : absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction-to-ambient ja 62.5 c/w junction-to-case jc 0.89 c/w
4n90 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-479.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25c 1.05 v/c v ds =900v, v gs =0v 10 a drain-source leakage current i dss v ds =720v, t c =125c 100 a forward i gss v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds(on) v gs =10v, i d =2a 3.5 4.2 ? forward transconductance g fs v ds =50v, i d =2a (note 4) 5 s dynamic parameters input capacitance c iss 740 960 pf output capacitance c oss 65 85 pf reverse transfer capacitance c rss v ds =25v,v gs =0v,f=1.0mhz 5.6 7.3 pf switching parameters total gate charge q g 17 22 nc gate-source charge q gs 4.5 nc gate-drain charge q gd v ds =720v, v gs =10v, i d =4a (note 4,5) 7.5 nc turn-on delay time t d(on) 25 60 ns turn-on rise time t r 50 110 ns turn-off delay time t d(off) 40 90 ns turn-off fall time t f v dd =450v, i d =4a, r g =25 ? (note 4,5) 35 80 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4 a maximum body-diode pulsed current i sm 16 a drain-source diode forward voltage v sd i s =4a, v gs =0v 1.4 v body diode reverse recovery time t rr 450 ns body diode reverse recovery charge q rr v gs =0v, i s =4a, di f /dt=100a/ s (note 4) 3.5 c notes : 1. repetitive rating: pulse width limited by maximum junction temperature 2. l=67mh, i as =4a, v dd =50v, r g =25 ? , starting t j =25c 3. i sd 4a, di/dt 200a/ s, v dd bv dss , starting t j =25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature
4n90 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-479.a ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
4n90 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-479.a 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
4n90 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-479.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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